Semiconductor memory device

Abstract

Abstract PURPOSE:To increase storing capacity, by providing a cell plate electrode in a trench structure, whose inner wall is coated with a thick insulating film, and arranging an electrode, which is connected to a source part of a memory cell through the thin insulating film, at said electrode. CONSTITUTION:A recessed trench structure is provided in an element isolating region of a memory cell. A memory-cell isolating thick film 10 is formed on the inner wall of the trench structure. On the film 10, an electrode 9 of a storing capacitor of the memory cell, which is connected to a source diffusing part 4 of the memory cell, is arranged. On the electrode 9, an insulating film 5, which is the dielectric for the storing capacitor of the memory cell, is formed. A memory cell plate 6 is arranged on the film 5. A semiconductor memory device is formed by the storing capacitor for the memory cell, a drain part 1 for forming a bit line, an insulating film 2 for a signal reading MOS transistor and a conducting gate electrode 3 forming a word line.

Inventors

• 👤 Sumio Terakawa
• 👤 澄雄 寺川
• 👤 Takashi Tsukura
• 👤 津倉　敬

Bibliographic Details