Nonvolatile semiconductor memory

Abstract

Abstract PURPOSE:To microminiature a semiconductor memory by forming an ultraviolet ray attenuating pattern in an ultraviolet ray invading passage to extremely reduce an erroneous operation due to the emission of ultraviolet rays. CONSTITUTION:An ultraviolet ray invaded from an ultraviolet ray invading unit 113 of a gap formed between an aluminum alloy film 109 connected with a source 104 of a PROM and an aluminum alloy film 110A connected with a drain 107 is repeatedly reflected to be attenuated between the film 109 and a silicon substrate 101 and further between the film 109, an ultraviolet attenuating pattern 108 and the film 109 and the substrate 101. Further, an ultraviolet ray attenuating pattern 108 is formed between the film 109 and the substrate 101 to narrow the invading path 114. The reflecting times increase as compared with the number reflected between the conventional aluminum film and the silicon substrate to increase the absorbing rate to prevent an erroneous operation, thereby enduring against the emission of the ultraviolet ray for a long time.

Inventors

• 👤 Masaki Sato
• 👤 正毅 佐藤
• 👤 Shinji Saito
• 👤 伸二 斎藤

Bibliographic Details