Electrode structure of semiconductor device

Abstract

Abstract PURPOSE:To obtain a flip chip with high reliability, by making recessed and projecting regions on the surface of an insulating layer which is formed on a semiconductor substrate. CONSTITUTION:An insulating layer made of recessed and projecting regions 23 is formed on the surface of the second insulating layer 22 formed on the first insulating layer 21. An aluminum layer 3, chromium layer 4, copper 5, and soldering layer 6 are formed in order on the second insulating layer 22, to complete a flip chip electrode. Thus, without the flat surface area enlarged, contact areas between metals, and between the insulating layer and the Al layer can be enlarged, and contact planes perpendicular to the contact surfaces become useful for improving the strength against the stress horizontal to the surface of the semiconductor substrate.

Inventors

• 👤 Kunihiro Nakamura
• 👤 中村　邦宏

Bibliographic Details