Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain an FET having the desired threshold voltage in good reproducibility by ion implanting an implanting energy which passes a gate electrode with ions of 80 or less of mass number to a substrate. CONSTITUTION:Ions of 80 or less of mass number such as implanting energy which passes 11B through a gate electrode 3 are implanted to a substrate 1 having a field effect transistor in which a threshold value is displaced to negative by desired value to set the threshold value to the desired value, and the substrate 1 is annealed at 300-450 deg.C as required. Here, in case of implanting 11B in dosage of 1.0X10<10>dose/cm<2>, if it is annealed at 380 deg.C for 5min after implanting approx. 0.3V, 11B, it can be adjusted in a direction of approx. 0.2V positive.

Inventors

• 👤 Tadashi Saito
• 👤 正 斎藤
• 👤 Hiroshi Nakamura
• 👤 浩 中村
• 👤 Masanori Sumiya
• 👤 角谷　昌紀

Bibliographic Details