Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable the formation of extrafine source, drain and gate regions by forming the side wall insulating film region of a pattern sidewall as source and drain contacting regions, and the gate region in a self-aligning manner by utilizing the side wall oxide film of a polysilicon electrode. CONSTITUTION:An insulating film 8 remains by utilizing anisotropic etching on the side wall of a portion to become a gate electrode, with the film 8 as a mask an SiO2 film 9 is formed by selective oxidation. Source and drain impurity is implanted from the portion in which the film 8 of the side wall is removed to thereby form ultrafine source and drain regions 14S, 14D. Further, a gate electrode 16 allows an insulating film 12 to remain similarly on the side after forming electrodes 11S, 11D for the source and the drain, with the film 12 as a mask the pattern of a gate forming portion is etched to expose a semiconductor surface for forming a narrowed gate to form the electrode 16.

Inventors

• 👤 Hiroshi Horie
• 👤 博 堀江

Bibliographic Details