Semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To reduce an area for forming a circuit by forming resistors for forming a transistor and an inverter in the same hole formed in a semiconductor substrate. CONSTITUTION:A p-type Si substrate 100, a field oxide film 101 of a channel stopper region and a p<+> type diffused layer 102 of a channel stopper are pro vided. Numeral 103 is a hole formed in an Si substrate, and numeral 104 is a gate oxide film SiO2 provided on the side of the hole. Numeral 105 is a phosphorus-doped polycrystalline silicon formed on a gate oxide film 104 for forming a gate electrode. Numeral 107 in the n<+> type diffused layer becomes ground potential. Numeral 111 corresponds to the drain of a transistor. An n<+> type diffused layer 109 is applied with a voltage of approx. 5V. Numeral 110 is a resistor connected with numeral 109, and using polycrystalline silicon. Numeral 106 is an interlayer insulating film for separating the gate electrode 105 and the resistor 110. Numeral 108 is a p-type diffused layer region for electrically separating the n<+> type diffused layer regions 107 and 109.

Inventors

• 👤 Yukinobu Murao
• 👤 幸信 村尾

Bibliographic Details