Deposited film forming device by microwave plasma cvd method

Abstract

Abstract PURPOSE:To stably form a deposited film having high quality on a substrate at a high speed by a microwave CVD method by forming plasma by the microwaves in a reaction vessel and impressing a bias voltage to a substrate or substrate holding body. CONSTITUTION:A gaseous raw material contg. SiH4, H2 or SiF4 is supplied through a gas chamber B from a perforated inside wall 3 into the reaction chamber A of the reaction vessel 1 and thereafter the microwaves 61 generated by a microwave power source 6 are introduced from a dielectric window 4 consisting of quartz, etc. into the reaction chamber A to form the plasma. The cylindrical substrate 10 disposed in the reaction chamber A is heated and held to and at a prescribed temp. by a substrate holding cylinder 9 contg. a heater 11. The negative side of a DC power source 15 is connected to the above- mentioned substrate 10 or to the substrate holding cylinder 9 if the substrate 10 is an insulator to impress the bias voltage thereto. A plasma boundary 16 is thereby formed near the surface of the substrate 10, by which the transfer of the charge particles, H<+>2, etc. is controlled and the a-Si(H, F) film having high quality is formed at a high speed.

Inventors

• 👤 Yasutomo Fujiyama
• 👤 藤山　靖朋

Bibliographic Details