Manufacturing method of semiconductor device

Abstract

Abstract PURPOSE:To form easily an uniform high-melting-point metal silicide layer, and to make the resistance of the diffusion layer sufficiently low, by ion- implanting for making amorphous onto a given exposed region on the surface of a silicon substrate. CONSTITUTION:After a field oxide film 2 and a gate oxide film 3 are formed on the principal surface of a P-type single crystal silicon substrate 1, a polycrystalline silicon film 4 having phosphorus doped is deposited. Next, the doped polycrystalline cilicon film 4 is patterned to form a gate electrode 5. Using the gate electrode 5 as a mask, phosphorus is ion-implanted to form a low-concentration diffusion layer 6 on the source-drain regions, an SiO2 film 7 is deposited, and then argon ions are implanted to make the surface of the gate electrode 5 and the source-drain regions being opened amorphous. Thereafter, a molybdenum film 9 is sputtered and heat-treated to form MoSi2 11, 11a on the gate electrode 5 and the source-drain regions, and then heat treatment makes the MoSi2 11, 11a a low resistance.

Inventors

• 👤 Hideo Honma
• 👤 本間　秀男
• 👤 Yutaka Misawa
• 👤 三沢　豊
• 👤 Osamu Saito
• 👤 修 斉藤

Bibliographic Details