Thin film transistor

Abstract

Abstract PURPOSE:To provide a high-speed and high-stable thin film transistor which results in carrier confinement effect on the hetero junction, reduces the trap probability and attains the high speed response, by laminating in multi-layers thin film layers having different forbidden band widths. CONSTITUTION:Each powder of Cd in a crucible 19 and S in a crucible 17 is heated by a heater 14 so as to result in a evaporation ratio of 1:1, and when a sufficiently stable evaporation is attained a shutter 12 is opened to deposite CdS on the substrate 9 by 100Angstrom . Next, the motor 10 is rotated to position the substrate 9 above the two evaporation crucibles 18, 20. Each powder of InSe2 in a crucible 18 and Cu in a crucible 20 is heated by a heater 15 so as to result in a evaporation ratio of Cu:In:Se=1:1:2, and when a sufficiently stable evaporation is attained a shutter 13 is opened to deposite CuInSe2 on the substrate by 100Angstrom . Above operations are repeated alternately. After the multi-layer thin film 2 is formed, electron beam evaporation deposites an SiO2 film over the entire film 2, and then etching removes the SiO2 film outside of sections for gate electrodes to be formed. Al is deposited with vacuum-evaporation, and is etched selectively to form gate electrodes 6a, 6b, providing a thin film transistor.

Inventors

• 👤 Koichi Haga
• 👤 浩一 羽賀

Bibliographic Details