Semiconductor device

Abstract

Abstract PURPOSE:To provide a bi-polar semiconductor device having excellent high-speed and high frequency characteristic, by utilizing two-dimensional carriers having conductivity and confinement effect defined on the hetero junction interface. CONSTITUTION:This semiconductor device includes a high resistance substrate 11, an N-type first semiconductor layer 12, a P-type second semiconductor layer 13, a high purity or N-type third semiconductor layer 14 having a smaller sum of the energy gap and electron affinity than that of the second semiconductor layer 13, an N-type fourth semiconductor layer 15, a control electrode 16, and ohmic electrodes 17, 18 contacted to the first and fourth semiconductor layers respectively. By utilizing high conductivity and confinement effect in a narrow region of the two-dimensional positive hole layer 19 created on the hetero junction interface between the second semiconductor layer 13 and third semiconductor layer 14, for example on being applied to a HBT, the base resistance rB and the base width WB can be reduced to realize a high performance HBT.

Inventors

• 👤 Hikari Toida
• 👤 樋田　光

Bibliographic Details