Field effect transistor

Abstract

Abstract PURPOSE:To obtain an element with a low cost, a long life and excellent electrical characteristics by employing a pi-conjugated system polymer film which has a composition shown by formula I (wherein R and R' denote radicals such as H or CH3 and R'' denotes a radical such as H or phenyl). CONSTITUTION:A pi-conjugated system polymer film 4, which has a composition shown by formula I (wherein R and R' denote H, CH3, OCH3, C2H5 or OC2H5 and R'' denotes H, CH3, C2H5 or phenyl radical), and which has ohmic contact with both of a source electrode 5 and a drain electrode 6, is formed on an insulation film 3 and the source electrode 5 and the drain electrode 6. As this polymer film 4 is economical as an organic semiconductor and has excellent stability in the air, an FET with excellent electrical characteristics can be obtained.

Inventors

• 👤 Akira Tsumura
• 👤 顯 津村
• 👤 Makoto Tsunoda
• 👤 誠 角田
• 👤 Yuji Hizuka
• 👤 裕至 肥塚
• 👤 Torahiko Ando
• 👤 虎彦 安藤

Bibliographic Details