Semiconductor device

Abstract

Abstract PURPOSE:To improve the heat radiation from a substrate, and obtain a high frequency semiconductor device for medium or high output power, by forming a recessed part on the back side of the substrate in order to constitute the thin region of an internal circuit for microwave, and forming an air hole and a metal layer whose surface is recessed. CONSTITUTION:On the surface of a semiconductor substrate 1, an integrated internal circuit 2 for microwave is formed. From the substrate back side toward its front side, a recessed part 5 is formed to make the region of the circuit thin. Around the circuit 2, air holes 4 reaching the surface of the recessed part 5 are formed, on the surface of which a metal layer 6 is formed to increase the heat radiation. According to such a constitution, the generated heat is rapidly conducted to the metal layer 6 and rdiated, because the substrate of the internal circuit part generating heat is thin. The heated air escapes upward through the hole 4. Thereby, the heat radiation is improved.

Inventors

• 👤 Hiroyuki Nagao
• 👤 長尾　博之

Bibliographic Details