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JPS62283684A Expired / Lapsed JP ⏱️ 0.0 years remaining

Optical probe device

Assignee: Hitachi Ltd
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Filing: 1986-06-02
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Granted: —
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Expires: 2006-06-02
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Abstract

Abstract PURPOSE:To simply obtain an optical probe of semiconductor by introducing a probe light from the end sphere of an optical fiber incident to a semiconductor light emitting element, and observing a photovoltaic current or a photovoltaic voltage generated at the semiconductor while moving the incident position to simplify the configuration of an optical probe unit to shorten the measuring time. CONSTITUTION:A semiconductor light emitting element 1 of an article to be measured is of an InGaAsP/InP buried hetero structure semiconductor laser, and emits 1.3mum of wavelength. The radius of curvature of an end sphere 3 formed at one end of a single mode optical fiber 2 in a spherical shape is 10mum. The light emitted from a light source 4 equal in oscillation wavelength to the emitting light wavelength of the element 1 is propagated in the fiber 2, then emitted from the sphere 3, and incident as a probe light to the element 1. An optical current or voltage generated at the element 1 by the probe light is measured by a detector 5. The fiber 2 is held by a chuck 6, which is moved by a fine adjusting unit to finely move the incident position of the light to the element 1 in X and Y directions.

Inventors

  • 👤 Takeshi Kato
  • 👤 猛 加藤
  • 👤 Kenichi Mizuishi
  • 👤 賢一 水石

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-04 20:41
CPC Classifications
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