Etching device

Abstract

Abstract PURPOSE:To control the damage of a sample and to prevent a decrease in the etching rate by irradiating an ion beam on the sample from an ion source, and switching the ion source to a plasma forming means at an opportune moment to form plasma in the vicinity of the sample. CONSTITUTION:An ion beam 14 is introduced into a vacuum chamber 16 from the ion source 2 provided with a microwave oscillator 10, a plasma chamber 4, a drawing electrode 8, etc., and the sample 22 placed on a rotating disk 18 is etched at a high speed. The progress of etching is detected by measuring a detection body 42 arranged on a disk 18 by a detector 44 and a counter 46. The ion beam 14 is cut off at a specified time at the end of etching by operating a shutter 24 with a controller 48. A gaseous reactant is then introduced through a mass flow controller 36, and a high-frequency voltage is impressed by a high- frequency power source 38 between the disk 18 and the shutter 24. Consequently, high-density plasma 50 is formed in the vicinity of the sample 22, and etching is performed while controlling the damage of the sample 22 to the utmost.

Inventors

• 👤 Yoshitaka Sasamura
• 👤 義孝 笹村

Bibliographic Details