Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To flatten adequately the surface of a substrate using a BPSG film and to form contact diffused layers without extinguishing fine contact holes too by a method wherein the BPSG film is deposited on an insulating film, flattened by heat- treating and performing a heat treatment in a vacuum and the like are executed to the BPSG film after the contact holes are opened in the BPSG film. CONSTITUTION:An insulating film 6 is deposited on the surface of the desired semicon ductor device element part formed on a semiconductor substrate 1, a borophos phosilicate glass(BPSG)film 7 is deposited on the insulating film 6 and the BPSG film 7 is flattened by heat-treating. Then, either of the following two: a heat treatment is performed in a vacuum after contact holes 9 are opened in the BPSG film 7 and the insulating film s or the contact holes g are opened after a heat treatment is performed in a vacuum: is performed. Thereafter, a heat treatment is performed in an atmosphere of gas containing the impurity of the above semiconductor substrate. Thereby, as the concentrations of B and P in the BPSG film are reduced after the vacuum heat treatment process ends, the fusing of the BPSG film is inhibited in a reflowing process, the fine contact holes opened in the BPSG film are never extinguished and a proper reflowing form can ba obtained on the upper end pet of each contact hole.

Inventors

• 👤 Hideto Ozaki
• 👤 尾崎　秀人

Bibliographic Details