Manufacturing method of semiconductor device

Abstract

Abstract PURPOSE:To prevent corrosion in an aluminum layer and to improve quality and reliability, by forming an inorganic film on the aluminum layer including copper, and performing dry etching treatment with the inorganic film and photoresist as masks as a unitary body. CONSTITUTION:A field insulating film 2 is formed on a semiconductor substrate 1. An aluminum layer 3 including copper and silicon is deposited on the film 2. A plasma silicon nitride film 4 is deposited thereon as an inorganic film. A photoresist film 5 is applied and formed on the inorganic film 4. The film 5 is exposed and developed, and a specified pattern is formed. Then, with the film 5 as a mask, the inorganic film 4 and the aluminum layer 3 undergo dry etching, and a pattern is formed. After ashing and baking, the device is immersed in a photoresist removing agent, and the photoresist film 5 is removed. At this time, with the inorganic film 4 being deposited, an interlayer insulating film 6 is formed on the patterned aluminum layer 3. Since the aluminum layer 3 is not contacted with the photoresist removing agent and etchant, corrosion due to these agent and the etchant is prevented.

Inventors

• 👤 Yuji Hara
• 👤 原　雄次
• 👤 Hideo Kuroda
• 👤 黒田　英雄

Bibliographic Details