Semiconductor device

Abstract

Abstract PURPOSE:To contrive improving the degree of integration by forming the second conductive type MOSFET which commonly has a gate electrode with the first conductive type MOSFET on the second side surface of a groove formed in a U-shape on a semiconductor layer. CONSTITUTION:An N-channel MOSFET which has a source and a drain of N-type impurity diffusion layers 105, 106, a gate oxide film 107 and a gate electrode of polycrystalline silicon 108 is formed on the first side surface of a groove 104 of an N-type silicon layer 102 and a P-type silicon layer 103 grown on an insulator substrate 101. A P-channel MOSFET which has a source and a drain of P-type impurity diffusion layers 109, 110, a gate oxide film 111 and a gate electrode of polycrystalline silicon 108 is formed on the second side surface. Each diffusion layer is connected to aluminum electrodes 113-115 through the aperture of an insulation film 112 and a field oxide film 116 separates the diffusion layer. This enables to improve the degree of integration of a semiconductor integrated circuit.

Inventors

• 👤 Isami Sakai
• 👤 勲美 酒井

Bibliographic Details