Molecular beam epitaxy apparatus

Abstract

Abstract PURPOSE:To reduce a number of times of exposure to the atmospheric condition of interior of molecular beam epitaxy apparatus, improve quality of crystal growth and simultaneously improve the rate of operation by providing movable molecular beam source so that the radiation axis where amount of radiation of molecular beam of source becomes maximum scans the main surface of crystal substrate. CONSTITUTION:A GaAs single crystal substrate 2 and a heater 3, which heats said GaAs single crystal substrate 2 through a molybdenum substrate holder 1, are provided on said molybdenum substrate holder 1. As the raw material of gallium (Ga) molecular beam source 4, high purity metal Ga is used. The GaAs crystal substrate 2 is scanned with the deflection angle theta in the maximum irradiating direction 9 of Ga molecular beam. Thereby, a mean value of Ga molecular beam amount reaching the GaAs crystal substrate 2 becomes constant, a growth layer of uniform thickness can be obtained, the GaAs crystal substrate 2 does not require any rotary mechanism and failure of substrate holder can be perfectly avoided.

Inventors

• 👤 Hideki Yakida
• 👤 八木田　秀樹

Bibliographic Details