Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To suppress an increase in a contact resistance by bonding aluminum to a contacting surface with a semiconductor substrate at depositing speed of 20Angstrom /sec or lower. CONSTITUTION:The upper surface of an electrode window formed in an insulating film 14 of a silicon substrate 11 is covered with an aluminum film 12A by a sputtering method, for example, at a depositing speed of 5Angstrom /sec. When the thickness of the film becomes approx. 200Angstrom , it is covered with an aluminum film 12B to 0.3-5mum at a depositing speed of 100Angstrom /sec. Then, aluminum electrode wirings are formed by patterning by dry etching using chlorine gas. When covered at delay depositing speed in this manner, aluminum particles are finely dispersed. Accordingly, a reaction between the aluminum and the silicon is uniformized to suppress a solid-phase epitaxial growth. Thus, an increase in a contacting resistance between the aluminum and the silicon can be suppressed.

Inventors

• 👤 Ichiro Fujita
• 👤 藤田　一朗
• 👤 Kazuo Tsunoda
• 👤 一夫 角田
• 👤 Hideyuki Yagimura
• 👤 柳村　秀行

Bibliographic Details