Manufacture of polycrystalline film

Abstract

Abstract PURPOSE:To form a homogeneous polycrystalline film by arranging substrates approximately vertically in the direction of a major axis in a reaction chamber, making an silicon hydride and an oxidizing gas to flow in the direction of the major axis in the reaction chamber and shaping polycrystalline silicon. CONSTITUTION:A pipe body 10 consists of a quartz pipe, and a large number of substrates 11 are disposed approximately vertically in the pipe body. Monosilane gas is fed from a conduit 141 and a carrier gas from a conduit 142, polycrystalline silicon containing no impurity is selected freely, and a film is formed. That is, when growing the polycrystalline silicon film, the temperature of a furnace is set at 500-900 deg.C, and a preheater is set at 400-500 deg.C and the substrates are set at predetermined positions. A vacuum pump 16 is operated and air is evacuated, and pressure in a reaction chamber is brought to 0.01-10Torr. Pressure is adjusted by starting the supply of SiH4 from 141 and the gas from 142 as required, and these substances are grown in a vapor phase on the substrates.

Inventors

• 👤 Keiji Kobayashi
• 👤 啓二 小林

Bibliographic Details