Semiconductor device

Abstract

Abstract PURPOSE:To reduce contact resistance and obtain an excellent ohmic contact for either of an N<+> type diffused layer or of a P<+> type diffused layer by making the surface concentration of the diffused layer which is connected to a wiring layer through a titanium nitride layer higher than a predetermined value. CONSTITUTION:An N<+> type or P<+> type diffused layer 2 formed in a semiconductor substrate 1 is exposed in an aperture 4 provided in an insulating layer 3. The 1st barrier layer 4 made of Ti, PtSi or the like is formed on the surface of the exposed diffused layer 2 and the 2nd barrier layer 5 made of TiN is formed on the layer 4. Then a wiring layer 6 made of Al or the like is connected to the diffused layer 2 through the barrier layers 4 and 5. The surface concentration of the diffused layer 2 is controlled to be higher than 1.0X10<20>cm<-3> by increase of dosage or employing short period annealing.

Inventors

• 👤 Toshiki Hamashima
• 👤 濱嶋　俊樹
• 👤 Hideharu Nakajima
• 👤 中嶋　英晴

Bibliographic Details