semiconductor equipment

Abstract

Abstract PURPOSE:To improve the operation speed of a memory cell by a method wherein an insulating film made of transition metal oxide with a high specific inductive capacity is formed on the surface of the higher impurity concentration region among two semiconductor regions separated by a shallow isolating region. CONSTITUTION:A high concentration N<+> type buried layer 2 which is surrounded by a deep isolating region 9 is formed on a P-type semiconductor substrate 1. A low concentration N-type semiconductor region 11 and a high concentration N<+> type semiconductor region 12, which are separated from each other by a shallow isolating region 9', are formed on the layer 2. Apertures 4a and 15 are formed in a silicon oxide film 4 and insulating films 13 and 14 formed on the surface of the substrate 1 at the position corresponding to the region 12 and an insulating film 17 which is made of transition metal oxide and has a high specific inductive capacity is formed over the inside of the aperture 15 and its circumference area. A high melting point metal layer 18 is formed on the film 17 to form a capacitor between the layer 18 and the region 12.

Inventors

• 👤 Akihisa Uchida
• 👤 明久 内田
• 👤 Ichiro Mitamura
• 👤 三田村　一郎
• 👤 Keiichi Higeta
• 👤 恵一 日下田
• 👤 Katsumi Ogiue
• 👤 荻上　勝己
• 👤 Kunihiko Yamaguchi
• 👤 邦彦 山口
• 👤 Takeo Shiba
• 👤 健夫 芝
• 👤 Taijo Nishioka
• 👤 西岡　泰城
• 👤 Noriyuki Sakuma
• 👤 憲之 佐久間
• 👤 Hiroshi Jinriki
• 👤 博 神力
• 👤 Kiichiro Mukai
• 👤 向　喜一郎

Bibliographic Details