Semiconductor element

Abstract

Abstract PURPOSE:To contrive to improve the mass productivity and reliability by preventing the propagation of cracks generating in bonding pads during the growth of insulation films by CVD by a method wherein a band conductor layer not contributed to wring is provided in proximity to the whole or part of the periphery of a pad. CONSTITUTION:The conductor layer including a bonding pad 1 is formed out of Al or Al alloy, and its periphery is almost all surrounded by a band conductor layer 6. The band conductor layer is e.g. 5-20mum wide and is provided at an interval of 10-30mum from the bonding pad. Cracks 3 of an insulation film which generate in the periphery of the bonding pad during the growth of insulation film stop at the inner periphery of this band conductor layer but do not propagate outside. Providing this layer in the form of branching from the wiring part extending out of the bonding pad produces the same effect. Besides, if this laser is provided in the form of surrounding only the side situated inside the bonding pad on the element, the propagation of cracks of insulation film to the principle circuit part can be prevented.

Inventors

• 👤 Tomio Okamoto
• 👤 岡本　富美夫

Bibliographic Details