Semiconductor device

Abstract

Abstract PURPOSE:To shorten the time required for production, especially for the growth of a semiconductor layer, by a method wherein a compound semiconductor buffer layer usually not doped is caused to have an N type compound semiconductor buffer layer buried at an appropriate depth. CONSTITUTION:On a GaAs substrate 1, an N type GaAs layer 7 is formed, whereon an undoped GaAs channel layer 4, undoped AlGaAs layer 5, N type AlGaAs electron supplying layer 6 are formed, in that order. In a semiconductor designed as such, donors within the N type compound semiconductor buffer layer a re ionized, which enables the potential to be lowered of the conduction band a short distance from the substrate. Accordingly, neither electron mobility nor electron concentration in the 2DEG layer will be harmed even when the buffer layer in its entirety is made thinner.

Inventors

• 👤 Masahiko Sasa
• 👤 佐々　誠彦

Bibliographic Details