Semiconductor device

Abstract

Abstract PURPOSE:To suppress the occurrence of electromigration when a current is conducted to a wiring layer and to improve the reliability of the device, by using a material, in which 0.5-5wt% Ti is included in Al or Al-Si alloy as a wiring material. CONSTITUTION:A field insulating film 12 comprising SiO2 is formed on the surface of a semiconductor substrate comprising silicon. A contact hole is provided in the insulating film 12. As a first layer wiring metal, Al or Al-Si alloy including 1-3wt% Ti is deposited so as to cover the insulating film 12 by a sputtering method or a vacuum evaporation method. Thereafter, the deposited metal is patterned in accordance with a desired first-layer wiring pattern. Then a wiring layers 14 and 16 are formed as the first layer. Of these wiring layers, the wiring layer 16 is formed so that ohmic contact with the surface of a substrate 10 is provided through a contact hole. An interlayer insulating film 18 comprising SiO2 is formed so as to cover the wiring layers 14 and 16 on the insulating film 12. With a photoresist mask 20 as a mask, selective etching is performed. Thereafter, a metal, which is similar to the first layer wiring, is deposited as a metal for a second-layer wiring on the interlayer insulating film 18. Then patterning is carried out.

Inventors

• 👤 Katsuyuki Yokoi
• 👤 横井　勝之

Bibliographic Details