Etching apparatus

Abstract

Abstract PURPOSE:To equalize distribution of processing rate within the substrate surface by placing a sample opposed to a gas supply port within a hermetically sealed vessel having a gas supply port at the ceiling, providing a gas diffusion plate at the intermediate portion and also providing an exhaust port at the side surface of vessel almost in the same height as the upper surface of sample. CONSTITUTION:The specified amount of reaction gas is supplied to a plasma generating chamber 20 from a tube 19 and it is excited with microwave supplied through a waveguide 22 and a window 21 to generated ion and radical. The excited reaction gas is guided to a reaction vessel 11 through a tube 12 and then it is supplied onto a semiconductor substrate 14 for chemical processing through the gap formed by a gas diffusion plate 13, ceiling and side wall of vessel. The gas is then absorbed and exhausted from a tube 18 through a gap 17 surrounding the substrate. Since a conductance of exhaust tube 18 is restricted small with the gap 17, the gas beam line m takes a way toward the center of substrate along the surface of substrate. Therefore, substrate surface is processed uniformly.

Inventors

• 👤 Shuzo Fujimura
• 👤 藤村　修三

Bibliographic Details