Sputter device

Abstract

Abstract PURPOSE:To make possible the sputtering under a low pressure and to prevent the destruction of a cathode by forming a Miller magnetic field in a treating chamber for film formation and introducing a microwave into the magnetic field. CONSTITUTION:The microwave is introduced into a vacuum chamber 1 and resonance motion is induced in electrons at the approximate center P between a substrate holder 4 and the cathode 6 so that the energy from the microwave is efficiently absorbed by the electrons. The electrons are confined in the Miller magnetic field 10. The electrons obtaining the high energy ionize the Ar atoms around the same and therefore the high-density plasma 14 is obtd. under the low Ar pressure. The plasma density can be controlled by the energy of the microwave to be impressed and consequently the discharge voltage at which the sputter rate of the target can be maximized can be set. The efficient sputtering is thus made possible.

Inventors

• 👤 Tamotsu Shimizu
• 👤 保 清水
• 👤 Yutaka Saito
• 👤 裕 斉藤
• 👤 Yasumichi Suzuki
• 👤 康道 鈴木
• 👤 Hidezo Sano
• 👤 秀造 佐野
• 👤 Susumu Aiuchi
• 👤 進 相内

Bibliographic Details