Semiconductor laser element

Abstract

Abstract PURPOSE:To enable the high-yield mass production of the titled element with a saturable absorption region provided in the resonator, by a method wherein the active layer is close to a layer having saturable absorption characteristic to the degree of action as the combination optical waveguide. CONSTITUTION:The induced emission of light is caused by carrier recombination in the active layer 46. On the other hand, a thin film layer 50 allows no excitation of no injection of minority carriers and has a saturable absorption region for laser beams because of equality in energy band gap to that of the active layer 46. In other words, the titled element is provided with the saturable absorber in its resonator. The LD having the saturable absorber in the resonator oscillates Q-SW short pulses on conditions such as the size of said absorber and the size of internal gain, or holds the property of photo bi-stability. Therefore, incorporating this structure in this element realizes the semiconductor element of self-modulation type and that of photo bi-stability.

Inventors

• 👤 Kouichi Kuronaga
• 👤 康一 玄永
• 👤 Haruki Kurihara
• 👤 栗原　春樹

Bibliographic Details