Inspection-correction apparatus for mask pattern defect

Abstract

Abstract PURPOSE:To prevent detect correction marks from remaining, by a method wherein a mask pattern is scanned with a converged ion beam, and pattern defects are detected by obtained secondary electron signals; then, at the same time, the defects are corrected by ion beam irradiation. CONSTITUTION:Secondary electron signal waveforms 33 are obtained when the mask pattern 30 of a mask substrate 29 is scanned with a scanning ion beam 32. Thus, secondary electron signals made binary in scanning are successively contained into a video memory 25. On finish by a frame, a video signal processing circuit 24 successively reads out corresponding mask pattern design data which have been made binary by means of a CPU 26 via I/O bus 28, compares said data with the data in the video memory 25, and checks them for difference. If they have a difference, the data of its coordinates and size is fed to a beam deflection control circuit 22, and a defect part 31 is corrected by irradiation with ion beams 12.

Inventors

• 👤 Hiroaki Morimoto
• 👤 森本　博明
• 👤 Kazunori Saito
• 👤 和則 斉藤
• 👤 Susumu Takeuchi
• 👤 晋 竹内

Bibliographic Details