Semiconductor device

Abstract

Abstract PURPOSE:To obtain a highly efficient semiconductor device in a structure, wherein a heterojunction having an excellent withstand-voltage property and an excellent reliability is used, by a method wherein a nitride film of an element constituting the surface semiconductor layer is formed between the gate electrode and the semiconductor layer on one side of the semiconductor layers, which is located on the side of the surface of the semiconductor device. CONSTITUTION:A normally-ON FET, which has the electron affinity smaller than that of a first semiconductor layer 2 and uses a semiconductor layer having a high donor impurity density, is assumed to having been formed in a second semiconductor layer 13. Accordingly, the current path on the heterojunction interface between both semiconductor layers 12 and 13 becomes a two-dimensional electronic layer 18. A nitide film 14 of an element constituting the surface semiconductor layer is formed between the second semiconductor layer 13, which is used as the surface semiconductor layer, and a gate electrode 16 in an extremely thin film. Whereby the lowering of the mutual conductance (gm) is suppressed by the second semiconductor layer 13 to the minimum, and moreover, the gate tunnel current is made to reduce according to the action that an energy gap is expanded on the interface, where comes into contact with the gate electrode 16, the reverse gate withstand voltage is made to improve.

Inventors

• 👤 Hikari Toida
• 👤 樋田　光

Bibliographic Details