Thin-film transistor array and manufacture thereof

Abstract

Abstract PURPOSE:To obtain a thin-film transistor array, through which the number of masks for a TFT switching array is reduced and yield is improved, by forming structure in which an insulator layer and an amorphous semiconductor layer are patterned to the same shape as a gate electrode. CONSTITUTION:A source electrode 5 and a drain picture-element electrode 5' are patterned on a transparent insulating substrate 1. a-Si and SiN are formed continuously onto the substrate acquired through an above-mentioned method without breaking a vacuum through a plasma CVD method. A metal for a gate electrode is evaporated, a resist 8 for a gate pattern is shaped by a photo- resist, and the gate electrode 2l is formed while using the resist 8 as a mask. Lastly, an SiNX layer 3 and an a-Si layer 4 are etched while employing the patterned resist 8 and the gate electrode 2 as masks. The resist is removed, thus forming a TFT matrix switching array for liquid-crystal display.

Inventors

• 👤 Mamoru Takeda
• 👤 守 竹田
• 👤 Tatsuhiko Tamura
• 👤 達彦 田村
• 👤 Kenichi Fujii
• 👤 謙一 藤井

Bibliographic Details