Nonvolatile semiconductor memory storage

Abstract

Abstract PURPOSE:To obtain a stable writing holding stage by forming an unp-doped semiconductor layer having electron affinity smaller than two semiconductor layers, to which secondary electron gas layers are shaped, between these two semiconductor layers. CONSTITUTION:An un-doped GaAs layer 2, an un-doped AlGaAs layer 3, an n type AlGaAs layer 4, an un-doped AlGaAs layer 5, an un-doped GaAs layer 6, an un-doped AlGaAs layer 7, an un-doped GaAs layer 8, an un-doped AlGaAs layer 9, an n type AlGaAs layer 10 and an n type GaAs layer 11 are formed onto a semi-insulating GaAs substrate 1 in succession. Source and drain electrodes 13, 14 brought into ohmic-contact with the layer 6 are shaped, and an opening section 19 is formed between the electrodes 13, 14 and a gate electrode 12 is shaped. According to the constitution, the layer 7 having electron affinity smaller than two-element electron gas layers 15, 16 formed on writing is shaped among the layers 15, 16, thus completely isolating the layers 15, 16 under a floating state after writing, then obtaining stable memorizing operation.

Inventors

• 👤 Masahiko Sasa
• 👤 佐々　誠彦

Bibliographic Details