Manufacture of semiconductor device with multiple layer interconnection

Abstract

Abstract PURPOSE:To prevent any disconnection from happening while forming a gentle interlayer insulating layer by a method wherein the first electrode wiring and dummy layer are evenly coated with silanol solution and then heattreated. CONSTITUTION:An insulating film 11, the first conductive electrode layer made of polycrystalline silicon are formed on the surface of a silicon semiconductor substrate 10. Firstly the first electrode wiring 13, a dummy electrode layer 14 are simultaneously formed by plasma etching process etc. Secondaly an interlayer insulating layer 15 is formed by coating the overall surface with silanol solution and then baking the surface at 900 deg.C. Finally the second electrode 16 may be formed by aluminum evaporation.

Inventors

• 👤 Takao Hashimoto
• 👤 孝男 橋本

Bibliographic Details