Semiconductor device

Abstract

Abstract PURPOSE:To form CMOS device structure using a crystal face optimum for operation at high speed of a CMOS device by shaping the CMOS device to a semiconductor crystal face having a (110) face orientation or a (023) face orientation or a face orientation (a face orientation parallel with said face) close to said face orientation. CONSTITUTION:40 represents an n type Si substrate having a (110) face orientation or a (023) face is adopted as the crystal face orientation of the substrate, the delay of a CMOS inverter at room temperature is made shorter than a conventional value by approximately 30%. Since the difference of mobility by a face at a low temperature such as 100K or lower is more amplified, said delay can further be shortened largely.

Inventors

• 👤 Masaaki Aoki
• 👤 正明 青木
• 👤 Toshiaki Masuhara
• 👤 増原　利明
• 👤 Shoji Hanamura
• 👤 花村　昭次
• 👤 Yoshio Sakai
• 👤 芳男 酒井
• 👤 Seiichi Isomae
• 👤 誠一 磯前
• 👤 Satoshi Meguro
• 👤 目黒　怜
• 👤 Shuji Ikeda
• 👤 修二 池田

Bibliographic Details