Thin film phototransistor

Abstract

Abstract PURPOSE:To reduce the effect of creeping currents from an adjacent element largely without deteriorating the characteristics of a region used by forming a transparent electrode, n-CdTe, p-CdTe and n-CdTe onto a transparent substrate in succession, treating the surface of the n-CdTe in moisture or by alkali and shaping Al, In or Sn onto the surface as an electrode. CONSTITUTION:A transparent electrode pattern 5 is formed onto a glass substrate 6 through a photoetching method. Light-receiving sections having three- layer structure of n-CdTe 2, p-CdTe 3 and n-CdTe 4 are shaped by using an evaporation source containing an impurity, such as In, Sb, etc. at a substrate temperature of 300-400 deg.C through vacuum deposition. The whole is dipped into an organic alkaline solution under a metal-free state at 40 deg.C for approximately 10min, or left as it is for 30min in a thermostatic chamber at 40 deg.C and 90wt%, and Al, In or Sn film-formed through vacuum deposition again is patterned through a lift-off method, thus forming an upper electrode.

Inventors

• 👤 Yuuko Toyonaga
• 👤 豊永　由布子
• 👤 Nobuo Nakayama
• 👤 中山　信男
• 👤 Masaaki Ueda
• 👤 昌明 上田
• 👤 Hideo Koseki
• 👤 小関　秀夫
• 👤 Nobuhiro Dobashi
• 👤 土橋　伸弘

Bibliographic Details