Thin film transistor

Abstract

Abstract PURPOSE:To obtain a small off-current and a big on/off by using a laminar film composed of a thin titanic acid barium film and a BaTa2O6 film for a gate oxide layer. CONSTITUTION:A gate electrode 9 is arranged on an insulating substrate 8 and an oxide layer 10 having a laminar structure composed of insulating layers 10a and 10c and an inductor layer 10b is formed on that. The layer 10a consists of tin titanic acid barium whose leakage current is small and whose specific induction rate is high and the layer 10b has a high induction rate. The layer 10c is composed of BaTa2O3 whose characteristics of a boundary with a semiconductor layer is excellent. On the layer 10, a semiconductor layer 11 is laminated and on that, a source electrode 12 and a drain electrode 13 are laminated. In the thin film transistor fabricated such constitution, a gate leakage is extremely small and an off-current becomes under 1mA whereas a specific induction rate of the layer 10 is extremely high. Accordingly on/off becomes 10<4> or over. Also a mutual conductance is extremely high.

Inventors

• 👤 Jun Kuwata
• 👤 純 桑田
• 👤 Kuni Ogawa
• 👤 小川　久仁
• 👤 Koji Nomura
• 👤 幸治 野村
• 👤 Yosuke Fujita
• 👤 洋介 藤田
• 👤 Atsushi Abe
• 👤 阿部　惇
• 👤 Koji Nitta
• 👤 新田　恒治

Bibliographic Details