Photodetecting element

Abstract

Abstract PURPOSE:To prevent generation of misfit dislocation by a method wherein between a single crystal substrate and a photodetective layer, whose lattice constant is equal, recombination layer, whose lattice constant is different from the above, is inserted and a thickness of a single crystal layer inserted in-between is to be less than certain value. CONSTITUTION:Hg0.9Cd0.1Te recombination layer 2 and an N type Hg0.7Cd0.3Te photodetective layer 3 are provided on a CdTe1-xSex substrate 1 and are formed double hetero junction. A storage electrode 5 and a read electrode 6 are provided on the layer 3 through an insulation film 4. In this constitution, composition of the substrate 1 is designated as x=0.04, then the lattice constant of the substrate 1 and the layer 3 are about 6,450Angstrom . Comparing with the said lattice constant, the lattice constant of the layer 2 has about 0.06% of mismatch, however the generation of misfit dislocation caused by the lattice mismatch can be prevented by means of that the thickness thereof is designated less than 0.2mum which is limitted thickness generating misfit dislocation.

Inventors

• 👤 Mitsuo Yoshikawa
• 👤 吉河　満男
• 👤 Michiharu Ito
• 👤 伊藤　道春
• 👤 Kenji Maruyama
• 👤 研二 丸山

Bibliographic Details