Plasma treating device

Abstract

Abstract PURPOSE:To enable to feed high power to a plasma treating device and to contrive to shorten the plasma treating process by a method wherein an insulator is molded by burying in the jetting ports of the upper electrode. CONSTITUTION:An insulator 10 is buried in the jetting ports 7 of an upper electrode 9. This insulator, which is made of ceramic, such as alumina, is formed into a conical form, is fitted in the jetting ports 7 of the upper electrode 9 and can be used for coping with the wind pressure of jetting gas and a difference between the thermal expansion coefficients of the parts of the jetting ports. By constituting the jetting ports 7 in such a way, it can be dissolved for an electric field to concentrate on the parts of the jetting ports 7 by an insulation effect. As a result, high power can be fed to the plasma treating device and the plasma treating process can be shortened.

Inventors

• 👤 Kenji Koyama
• 👤 小山　堅二
• 👤 Kanetake Takasaki
• 👤 高崎　金剛
• 👤 Atsuhiro Tsukune
• 👤 敦弘 筑根

Bibliographic Details