Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable to perform a highly reliable dielectric isolation using a simple process by a method wherein two semiconductor single crystal substrates are tightly coupled, and the semiconductor single crystal of the isolation region of the active element formed on one side is removed to the depth reaching the insulating film of a junction part. CONSTITUTION:An Si single crystal substrate 11 and an Si single crystal substrate 12, whereon an insulating film 13 is formed on the surface, are tightly fixed, a heat treatment is performed at the temperature of 200-1,300 deg.C, and they are coupled. After the substrate 12 is shaved off until the necessary thickness is obtained by performing polishing, etching and the like, and an element is formed thereon. Subsequently, necessary diffusion layers 14 (141 and 142) are formed, a mesa etching is performed on the element isolation region to the depth reaching the insulating film 13, and each element region is isolated into an island form. An insulating film 15 of SiO2, Si3N4 and the like is formed on the whole surface of the substrate whereon an element is formed, and the condition wherein each element is isolated by being completely enveloped by a dielectric. Subsequently, necessary wirings are performed and the desired semiconductor device is completed.

Inventors

• 👤 Masaru Shinpo
• 👤 新保　優
• 👤 Kiyoshi Fukuda
• 👤 潔 福田
• 👤 Yoshio Yamamoto
• 👤 山本　善生
• 👤 Yoshiaki Owada
• 👤 大和田　義明

Bibliographic Details