Semiconductor laser device

Abstract

Abstract PURPOSE:To control a wavelength continuously by forming structure in which a phase control region utilizing the variation of a refractive index due to a plasma effect is added to an active region in a wavelength control type distributed reflection type laser. CONSTITUTION:A diffraction grating 10 is shaped partially to a section corresponding to a wavelength control region 15 on a substrate 1. An optical guide layer 2 and an active layer 3 are grown on the whole surface in succession, and other layers 3 are removed so that the layer 3 is left only to a section as an active region 16 adjacent to the region 15. A phase control region 17 is formed on the end surface side reverse to the region 15. A clad layer 4 and cap layers 5 are grown on the whole surface in succession, and a wavelength control electrode 6, and active electrode 7 and a phase control electrode are shaped onto each layer 5. Driving currents Id are injected to the electrode 7 having such structure from an electric circuit 13 and wavelength control currents It1 and phase control currents It2 simultaneously to the electrode 8 so that It1/It2 is kept constant from an electric circuit 14. Accordingly, the refractive index of the region 17 varies by a plasma effect, thus continuously controlling wavelengths.

Inventors

• 👤 Masayuki Yamaguchi
• 👤 山口　昌幸

Bibliographic Details