Method of forming electrode of semiconductor device

Abstract

Abstract PURPOSE:To form a wiring layer without any steps by embedding a hole opened in an insulating film with aluminium and forming the wiring layer on it. CONSTITUTION:An insulating film 2, a contact hole A and an aluminium thin film 8 are formed on a semiconductor substrate 1. A viscosity resin film 9 is coated. The films 9 and 8 are eliminated with etching. An aluminium thin film 10, an insulating film 11 and a viscosity resin film 12 are formed. The films 1, 2 and 11 are etched. A through hole B is formed in an insulating film 13 and aluminium is embedded into a concave of a hole B. Then a wiring layer 16 is formed.

Inventors

• 👤 Shoichi Nakagawa
• 👤 正一 中川

Bibliographic Details