Plasma surface treatment device

Abstract

Abstract PURPOSE:To improve the poor uniformity of etching speed as well as to perform a high speed etching by a method wherein the sample placed on a sample electrode is processed using the plasma of inert gas which is introduced into a reaction chamber. CONSTITUTION:As the potential gradient, which is the electric line of force in other words, generating in the ion sheath located between a pole-like electrode 101 and plasma, is crossed almost at right angle with the line of magnetic force 116 of the magnetic field generated by magnets 103, 104,..., electrons generate a magnetron movement, and they move spirally in the circumference of the pole- like cathode 101. However, as the line of magnetic force 116 goes in and out of the pole-like electrode 101, the electrons perform a spiral movement in the circumference of the pole-like cathode, it comes into collision with the pole- like cathode and bounced back, and as this condition is repeated, a region having high plasma density is generated in the vicinity of the pole-like electrode 101. When high density plasma is generated, the impedance of plasma is reduced, and a high ion current can be applied to the pole-like cathode and the sample electrode, thereby enabling to improve the etching speed of the sample 102.

Inventors

• 👤 Tsutomu Tsukada
• 👤 勉 塚田
• 👤 Kiyoushiyoku Kin
• 👤 金　京植

Bibliographic Details