Exposing mask
Abstract
Abstract PURPOSE:To obtain an exposing mask suitable for manufacture of a thin film IC, etc. by providing a metallic (oxide) film having low light transmittivity in the prescribed 1st region of a transparent glass surface and a metallic (oxide) film having the light transmittivity higher than the light transmittivity of the metallic (oxide) film of the 1st region in the prescribed 2nd region. CONSTITUTION:An exposing mask formed with the metallic oxide film 2 of FeO, etc. having the large light transmittivity on one surface of a glass plate 1 and formed with the metallic film 3 of Cr, etc. having the light transmittivity of <=1/3 the light transmittivity of FeO in another region is manufactured. The negative type photosensitive material on the thin metallic film 5 formed on the substrate 4 is exposed by using such mask. The exposing region 8 corresponding to the film 3 having the small UV transmittivity is not photoset and the exposing region 7 corresponding to the film 2 is in an imperfectly set state. The region 6 corresponding to the films 2, 3 is perfectly set. The region 8 is thus thoroughly removed, the region 7 is partly removed and the region 6 remains without being removed in a developing stage. The generation of a sharp step in the regist pattern formed in such a manner is obviated and the generation of a disconnection defect is prevented.
Inventors
- 👤 Hikari Kimura
- 👤 光 木村
- 👤 Takeshi Kiyono
- 👤 健 清野
Bibliographic Details
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