Semiconductor device

Abstract

Abstract PURPOSE:To know storage contents of a memory cell only by measuring a current by varying resistance values of respective load elements of two inverter for constituting a flip-flop of a memory cell for consisting of a flip-flop. CONSTITUTION:A memory cell 8 constitutes an FF for consisting of two inverters, while memory nodes 9a and 9b form complementary data. Two load resistances 2A and 2B are set to different resistance values. As a result, a current consumed in the memory cell varies in accordance with the storage state, and contents of the memory cell can be grasped with the aid of the magnitude of the current without access.

Inventors

• 👤 Kenji Anami
• 👤 穴見　健治

Bibliographic Details