Light transmission type semiconductor photodetector

Abstract

Abstract PURPOSE:To obtain a small-sized device having high optical transmittance and photoelectric conversion efficiency by forming a semiconductor layer, EG thereof is smaller than hnu and impurity concentration therein is lower than a specific value, to a p-n junction section while bringing the transmittance of beams reaching to one main surface from the other main surface to a specific value or more. CONSTITUTION:A photodetecting section in which a semiconductor layer 22, a band gap EG thereof is smaller than the energy hnu of input beams and impurity concentration therein is lower than 1X10<19>cm<-3>, is formed onto a first conduction type semiconductor substrate 21, EG thereof is larger than hnu, and a semiconductor layer 23, EG thereof is larger than hnu and which has a conduction type reverse to the semiconductor substrate 21, is shaped onto the semiconductor layer 22 is constituted. The transmittance of beams reaching to one main surface from the other main surface is brought to 50% or more. The layer 22 such as an In0.25Ga0.75As one 22 in doner concentration of 1X10<15>cm<-3> is grown on the substrate 21 such as an n type GaAs one 21 to which Te is doped, and the layer 23 such as a p type GaAs one 23 to which zinc is doped is grown on the layer 22. Optical transmittance is controlled by the thickness of the optical absorption layer 22.

Inventors

• 👤 Junichi Oura
• 👤 純一 大浦

Bibliographic Details