semiconductor equipment

Abstract

Abstract PURPOSE:To increase the electrostatic breakdown withstanding voltage of a MIS element or an input protective circuit for a MISIC by directly connecting one semiconductor region of a protective element using a MISFET to a bonding pad and comparatively enlarging the area of the semiconductor region. CONSTITUTION:N<+> type semiconductor regions 52, 53 as drain and source regions are formed to an N channel MOS transistor 46. The drain N<+> type semiconductor region 52 is connected to an input bonding pad 45 in aluminum through contact holes 61. The input bonding pad 45 is connected to one end of an N<+> type semiconductor region 54 as a protective resistor through a contact hold 63. The other end side of the N<+> type semiconductor region 54 as the protective resistor and a gate electrode 60 for an input gate are each connected through contact holes 69, 70. When a protective element consisting of the N- MOS transistor is used, the area of the N<+> type drain region 52 as one semiconductor region must be made comparatively large.

Inventors

• 👤 Michiaki Ueno
• 👤 上野　達彰
• 👤 Futoshi Inoue
• 👤 太 井上

Bibliographic Details