Electrostatic breakdown preventive element

Abstract

Abstract PURPOSE:To protect a semiconductor integrated circuit device from forward and reverse surge voltage without affecting normal circuit operation by bringing a first electrode into ohmic-contact with and connecting it to a first region while a second electrode is brought into ohmic-contact with and connected to a second resion. CONSTITUTION:A first electrode 17 is brought into ohmic-contact with and connected to a first region 14 through a contact hole formed to an insulating layer 16, and a second electrode 18 is also brought into ohmic-contact with and connected to a second region 15 through a contact hole. The first electrode 17 and the second electrode 18 are each connected among external terminals and an internal circuit, and an electrostatic breakdown preventive element 5 is connected in parallel among the internal circuit 1 and the external terminals 4,4. When surge voltage is applied to the external terminals, voltage applied between the first electrode 17 and the second electrode 18 exceeds a threshold formed from an inversion layer conducting the first region 14 and the second region 15, the inversion layer is shaped on the surface of a semiconductor region 13, and the first electrode 17 and the second electrode 18 are conducted. Accordingly, surge voltage passes through the electrostatic breakdown preventive element 5 from the external terminal 4 and flows through the external terminal 4, and surge voltage is absorbed, thus protecting the internal circuit 1.

Inventors

• 👤 Tetsuo Asano
• 👤 哲郎 浅野

Bibliographic Details