photo sensor

Abstract

Abstract PURPOSE:To make an adhesion reliable and to strengthen against a flaw by forming an electrode of photoelectric conversion layer with a Cr conductive material. CONSTITUTION:After a photoelectric layer 2 made of amorphous Si is formed on a glass substrate 1, an N<+> layer made of amorphous Si is formed on the layer 2. After a Cr conductive layer is evaporated on the N<+> layer of the layer 2 and the substrate 1, an electrode 4 and a multilayer interconnection lower electrode are formed with a photo-lithography method. An ohmic contact layer 3 is formed through eliminating the N<+> layer of the layer 2 with electrodes 4 and 5 as masks. Multilayer interconnection upper electrodes 7, 8, 9 and 10 are formed through making a contact hole on a film 6 after forming an insulating film 6 on an electrode 5 and an exposed layer 2. Owing to this composition, as the electrodes 4 and 5 are formed by a Cr conductive material, an adhesion between the substrate 1 and the layer 3 is improved and also the connection becomes reliable and the strength against a flaw is improved.

Inventors

• 👤 Seiji Kakimoto
• 👤 柿本　誠治
• 👤 Makiko Ishidoya
• 👤 石戸谷　牧子
• 👤 Yuichi Masaki
• 👤 裕一 正木
• 👤 Kenji Morimoto
• 👤 健司 森本

Bibliographic Details