Formation of soi

Abstract

Abstract PURPOSE:To obtain SOI by stacking a film A which is not liquified at the melting point of Si, a film B which is more easily vaporized than the film A on a Si thin film and then stacking a film C which is more difficult to be vaporized than the film B to a part of said film B and then single-crystal-lizing a thin film around the region not covered with the film C with the heating during a short period of time. CONSTITUTION:A thin film 6 of poly-Si, a thin film 7 of SiO2A, a thin film 8 of poly-SiB and a thin film 9 of SiO2C are stacked on a quartz substrate 5. It is irradiated with laser beam during a short period of time, Si 6 is melted and heating is suspended. Heat of film 6 is not dispersed to the substrate 5, convection is not generated at the surface of substrate due to the heating within a short period of time, Si is vaporized from an aperture 10 getting the vaporization heat, cooling is effective and the aperture is cooled quicker than the other region. Thereby, the Si single crystal region can be obtained around the aperture 10. In the case of laser beam heating, use of SiO2 film in the thickness of about 850Angstrom is effective. According to this structure, the SOI single crystal can be formed at the desired region regardless of the underlayer structure.

Inventors

• 👤 Yasuo Ono
• 👤 泰夫 大野

Bibliographic Details