Heat treatment for semiconductor thin film

Abstract

Abstract PURPOSE:To enable to favorably perform a heat treatment on a semiconductor thin film utilizing an ultraviolet irradiation annealing method by a method wherein the good ultraviolet absorber is arranged in the vicinity of the semiconductor thin film to be formed on the substrate. CONSTITUTION:An ultraviolet irradiation annealing is applied to a semiconductor thin film (silicon thin film) 4 in a state that a good ultraviolet absorber 2 is arranged in the vicinity of the semiconductor thin film 4, thereby heat absorption into the semiconductor thin film 4 is promoted, the temperature of the semiconductor thin film 4 is made to rise and a heat treatment is applied to the semiconductor thin film 4 with the normal ultraviolet power of the ultraviolet irradiation annealing device. Accordingly an augmentation of the crystal grains of the semiconductor thin film 4 or an activation in the semiconductor thin film 4 in after an impurity is ion-implantated in the semiconductor thin film 4 can be done by an ultraviolet irradiation annealing method.

Inventors

• 👤 Takashi Noguchi
• 👤 隆 野口
• 👤 Yasushi Morita
• 👤 靖 森田
• 👤 Hisao Hayashi
• 👤 久雄 林

Bibliographic Details